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:: Volume 2, Issue 10 (12-2018) ::
عصر برق 2018, 2(10): 42-45 Back to browse issues page
The Impact of the Second Gate on High Frequency Performance of AlGaN/GaN HEMT
Seyed reza Hoseini, Zeinab Jalali
Abstract:   (1749 Views)
High Electron Mobility Transistors (HEMTs) are the promising devices for high speed structures. In this paper, the electrical characteristics of AlGaN/GaN HEMT have been investigated. The impact of the second gate on the short channel effects (SCEs) and the high frequency performance of presented structurehas been analyzed. All simulations were carried out using 2-D Silvaco software. The threshold voltage, on-state current, off-state current, subthreshold swing have been evaluated. It was shown that SCEs   on state current, off state current, subthreshold swing have been evaluated. It was shown that Siftware. The thresignificantly decrease with increasing the number of gates because of the better control of gate in double gate (DG) structure. Also, the high frequency parameters (transconductance, gate capacitance and cut-off frequency) have been calculated. The results show that the cut-off frequency in double gate (DG) structure is more than that of single gate (SG) structure. Therefore, the DG structure is more suitable device for high frequency applications.
 
Keywords: High electron mobility transistor, Short channel effects, gate capacitance, transconductance, high cut-off frequency
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Type of Study: Scientific-extension | Subject: Special
Received: 2018/06/22 | Accepted: 2018/09/23 | Published: 2018/12/21
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hoseini S R, jalali Z. The Impact of the Second Gate on High Frequency Performance of AlGaN/GaN HEMT. عصر برق. 2018; 2 (10) :42-45
URL: http://kiaeee.ir/article-1-175-en.html


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Volume 2, Issue 10 (12-2018) Back to browse issues page
نشریه عصر برق - انجمن مهندسین برق و الکترونیک ایران - شاخه خراسان Khorasan Iranian Association of Electrical and Electronics Engineers (kiaeee)
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